How does the factory detect the aging of electronic components? Which company is strong in electronic component testing

Date：2022-04-18 15:04:31 Views：1035

How does the factory detect the aging of electronic components? Aging, also known as "sophistication", refers to the continuous application of certain electrical stress to components under a certain ambient temperature and for a long time, through the comprehensive action of electrical and thermal stress to accelerate various physical and chemical reaction processes inside components and promote the early exposure of various potential defects hidden inside components, so as to achieve the purpose of eliminating early failure products.

Significance of detecting aging of electronic components

1. It has a good screening effect for a series of defects that may exist in the process of manufacturing, such as surface contamination, poor lead welding, channel leakage, silicon wafer crack, oxide layer defect and local hot spot.

2. For components without defects, aging can also promote the stability of their electrical parameters.

Introduction to common aging screening methods

1. Normal temperature static power aging

Room temperature static power aging is to aging the device at room temperature. The PN junction of semiconductor is in the positive bias conduction state, and the thermal stress required for device aging is converted from the power consumed by the device itself. Due to the combined action of electricity and heat in the aging process of the device, various physical and chemical reaction processes inside the device are accelerated, which makes its potential defects exposed in advance, so as to eliminate the defective devices. This aging method does not need high-temperature equipment and is easy to operate, so it is widely used. In the safe range of the device, properly increasing the aging power (increasing the junction temperature of the device) can get better aging effect and shorten the aging time.

In order to achieve satisfactory aging effect, the following points should be paid attention to:

① Aging equipment shall be provided with good measures to prevent self-excited oscillation.

② When the voltage is applied to the device, it should be increased slowly from zero and decreased slowly when the voltage is removed, otherwise the instantaneous pulse generated by the sudden change of power supply voltage may damage the device. After aging, it shall be measured in time within the time specified in the standard or specification, otherwise some out of tolerance parameters during aging will return to the original value.

③ In order to ensure that the transistor can age at the highest junction temperature, the thermal resistance of the transistor should be measured accurately.

For integrated circuits, because their working voltage and current are greatly limited, their junction temperature rise is very small. It is difficult to reach the temperature required for effective aging without increasing the ambient temperature. Therefore, normal temperature static power aging is only applied in some integrated circuits (linear circuits and digital circuits).

2. High temperature static power aging

The power on mode and test circuit form of high-temperature static power aging are the same as that of normal temperature static power aging. The difference is that the former is carried out at higher ambient temperature. Due to the aging of devices at high ambient temperature, the junction temperature of integrated circuits can reach a very high temperature. Therefore, generally speaking, the high-temperature static power aging effect of integrated circuits is better than that of normal temperature static power aging.

China's military electronic components standard clearly stipulates that integrated circuits should undergo high-temperature static power aging. The specific conditions are: aging under the rated power supply voltage, rated load, signal and circuit specified in the product standard. Aging condition: 125 ± 3 ℃, 168 H (can be determined as required). Monitor at least every 8 h during aging.

3. High temperature reverse bias aging

In the high-temperature reverse bias aging, the PN junction of the device is added with high-temperature environmental stress and reverse bias piezoelectric stress at the same time. There is no current or only a small current in the device, and almost no power is consumed. This aging method is particularly effective for eliminating early failure devices with surface effect defects, so it has been widely used in the aging of some reverse applied semiconductor devices.

4. High temperature dynamic aging

High temperature dynamic aging is mainly used for digital devices. This aging method is driven by pulse signal at the input of the aged device, so that the device is constantly turned over. This aging method is very close to the actual use state of the device.

There are two basic test circuits for high temperature dynamic aging: series switch and parallel switch test circuits.

(1) Series switch test circuit is also called "ring counter" circuit. The utility model is characterized in that the output and input terminals of all tested devices are connected in series to form a ring counting circuit. Since the output of the former stage is the input of the latter stage, that is, the latter stage is the load of the former stage, there is no need to add excitation signal and load, so the equipment is simple and easy to realize. The disadvantage is that the failure of any tested device will stop the whole ring system and make the test in progress. The test will not return to normal until a new test circuit is replaced or a faulty device is shorted.

(2) the first mock exam of parallel switch is that the tested device is in parallel with the excitation power. Therefore, each device can be driven by an external switching voltage. The output of each device can be loaded with a maximum analog load, thus overcoming the disadvantage of the series switch aging.

The test condition of high temperature dynamic aging is generally 168 ~ 240 h under the maximum rated working temperature and maximum rated working voltage. For example, civilian devices usually take a few hours, military high reliability devices can choose 100 ~ 168h, and aerospace devices can choose 240h or even longer cycle.

Aging detection method of electronic components

1. The aging test of resistance elements generally applies the power and temperature environment according to the requirements of the specification. Special attention should be paid to whether the aging has the requirements of heat dissipation.

2. Capacitor aging test generally adopts high temperature and voltage aging. This method is: apply the rated voltage at the maximum rated working temperature of the capacitor for 96 ~ 100 h to eliminate the products with breakdown and short circuit caused by dielectric defects. For example, pinholes, defects and conductive particles in the dielectric of organic thin film capacitors will lead to short-circuit failure of capacitors in high temperature and voltage aging; When the liquid tantalum electrolytic capacitor with serious defects is aged at high temperature and voltage, the short-circuit current flowing through the defect is very large, which makes the product temperature rise suddenly. The electrolyte and solder vaporize rapidly, so that the pressure is enough to damage the product.

For capacitors without potential defects, high temperature voltage aging can eliminate the internal stress in the product, improve the dielectric performance and improve the capacity stability of the capacitor. High temperature voltage aging can make metallized paper dielectric (or plastic foil film) capacitors with defective media produce "self-healing" and restore their performance.

Precautions for high temperature aging of electronic components

1. The electrical stress of various components should be selected appropriately, which can be equal to or slightly higher than the rated condition, but it should be noted that higher than the rated condition can not introduce new failure mechanism. For example, when the load of some components exceeds the maximum rated value instantaneously, they will deteriorate or break down immediately. Even if some deteriorated components can work temporarily in the future, their service life will be shortened.

2. After the high-temperature aging test, it is required that the shell temperature be cooled to less than 35 ℃ before the device is allowed to be powered off. Due to the irregular movement of movable ions under the action of high temperature and no electric field, the performance of the device that has failed returns to normal, which may cover up the phenomenon that it has failed.

3. The test after aging test is generally required to be completed within 96h after the test.

I believe that by reading the above content, we have a deeper understanding of the aging detection of electronic components. Shenzhen Chuangxin Online Testing Technology Co., Ltd. is a well-known professional testing organization for electronic components in China. It has three standardized laboratories with an area of more than 1000 square meters. The scope of testing services covers: testing and verification of electronic components, identification of IC authenticity, product design, material selection, failure analysis, function testing, factory incoming material inspection, X-ray testing of components, tape braiding and other testing items.