Description:

The InGaAs EMMI and EMMI have the same principle for fault site detection and locating hot spots. Both tools detect photons emitted from the recombination of electrons-electron holes reunion, as well as from excitation by hot carriers. The difference lies in that InGaAs has better sensitivity and may detect longer wave length range, typically between 900-1600nm (versus 350-1100nm of EMMI) which is the same wave length spectrum of IR. Compared to EMMI, InGaAs is better in detecting “flaws of devices made by advanced processes” as devices of smaller size featuring lower operation voltage which, in turn, result in longer wavelength of photons triggered by hot carriers. InGaAs is hence well-suited for hot spot positioning for products manufactured by advanced processes.

Scope of Application:

InGaAs and EMMI have similar applications but InGaAs features more advantages as follows:

Detects defects in a shorter period, 5 to 10 times shorter than EMMI;

Detects defects micro current leakage and defects of advanced processes;

It’s capable of detecting micro metal bridges;

IR lights benefits better penetration rate over silicon substrate for IC back-side positioning analysis.

Testing Images:

InGaAs Hot Spot：

EMMI V.S. InGaAs: Detection strength difference between EMMI and InGaAs over the same hot spots.

Testing Equipment:

Due to lens rotation angle limitations, InGaAs can accommodate a maximum of 4 probe manipulators (4 probe tips) can be installed on the stage. The maximum height of sample should be lower than 10 cm. The operation needs to be performed in a totally-dark-chamber operation without the existence of light emitting devices, and it is not suitable for conducting experiments on heated products.