Description:

Dual-Beam FIB (Focused Ion Beam) machines use an ion beam to cut samples and an electron beam to observe the cross-section of the sample. They can also perform EDX (Energy Dispersive X-ray) elemental analysis.

Dual-Beam FIB has ultra-high-resolution ion and electron beams, allowing for nanoscale positioning and observation of fine structures in samples. The ion beam can provide a maximum current of up to 65nA, the excellent cutting speed can significantly shorten the analysis time and reduce experimental costs.

Scope of Application:

Failure analysis of semiconductor components and structure analysis (capable of reaching advanced processes down to 14 nm);

Process anomaly analysis in semiconductor production lines;

Analysis of epitaxy and thin film structures;

Preparation of transmission electron microscope (TEM) samples.

Testing Images:

TEM Sample Preparation: TEM specimens with a thickness of approximately 15nm can be prepared using a layer-by-layer delayering technique.

Copper Grain Analysis: By using special sample preparation techniques (grinding + ion milling), a large-area image of copper grains can be quickly obtained.

EDS Analysis: Large-area EDS detector (75 mm2) with excellent spatial resolution, is capable of high-end applications involving simultaneous cutting, imaging, and analysis.

Cross-section Analysis: The Helios NanoLab has excellent E-beam resolution, allowing clear visualization of voids and gate oxide with a resolution as fine as 3nm.

Images of Testing Equipment Energy:

FEI Helios NanoLab 660

    Maximum sample size: 150mm;

    Equipped with a 75mm2 SDD EDS detector for real-time EDS analysis;

    Equipped with MultiChem gas system capable of introducing six types of deposition or stain gases;

    When the observation width exceeds 100um or the depth exceeds 50um, it is recommended to switch to Plasma FIB, which has a faster cutting speed.